sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) SDURF1030CT(ctr) ultrafast plastic rectifier applications: ? antiparallel diode for high frequency switching devices ? anti saturation diode ? snubber diode ? free wheeling diode in converters and motor control circuits ? rectifiers in switch mode power supplies (smps) ? inductive heating and melting ? uninterruptible power supplies (ups) ? ultrasonic cleaners and welders features: ? fully molded isolation ? dual diodes-cathode common ? ultra-fast recovery ? low forward voltage drop ? high surge capability ? 200 volts thru 600 volts types available ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in mm option 1 SDURF1030CT SDURF1030CTr symbol min. typ. max. a 4.30 4.50 4.70 a1 1.10 1.30 1.50 a2 2.80 3.00 3.20 a3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.55 0.60 0.75 d 14.80 15.00 15.20 e 9.96 10.16 10.36 e 2.55 e1 5.10 h1 6.50 6.70 6.90 l 12.70 13.20 13.70 l1 1.60 1.80 2.00 l2 0.80 1.00 1.20 l3 0.60 0.80 1.00 p1 ( ? ) 3.30 3.50 3.70 p2 ( ) 2.99 3.19 3.39 q 2.50 2.70 2.90 15 24 310 45 55
sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) option 2(sr) ito-220ab
sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) marking diagram: where xxxxx is yywwl sdur = device type f = package type 10 = forward current (10a) 30 = reverse voltage (300v) ct/ctr = configuration ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping SDURF1030CT/ctr ito-220ab (pb-free) 50pcs / tube for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 300 v max. average forward i f (av) 50hz, sine wave, t c =112 10 a max. peak one cycle non- repetitive surge current i fsm 50hz, half sine wave 80 a SDURF1030CT SDURF1030CTr
sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) electrical characteristics: characteristics symbol condition max. units max. forward voltage drop(per leg) v f @ i f = 5a, pulse, t j = 25 1.3 v max. reverse current i r @v r = rated v r t j = 25 30 a max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 80 pf max. reverse recovery time t rr i f =500ma, i r =1a,and i rm =250ma 45 ns * pulse width < 300 s, duty cycle < 2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 max. storage temperature t stg - -55 to +150 maximum thermal resistance junction to case r jc dc operation 3.5 /w approximate weight wt - 2 g case style ito-220ab
sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current ( a) 1 10 100 1000 0 5 10 15 20 25 30 35 40 reverse voltage (v) junction capacitance (pf) 1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 forward voltage drop (v) instantaneous forward current (a) fig.2-typical reverse characteristics fi g .3-t yp ical instantaneous forward volta g e characteristics fig.1-typical junction capacitance tj=125 tj=25 tj=125 tj=25 tj=25
sangdest microelectronics technical data green products data sheet n0156, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SDURF1030CT(ctr) disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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